Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Artificial intelligence has been bottlenecked less by raw compute than by how quickly models can move data in and out of memory. A new generation of memory-centric designs is starting to change that, ...

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that the company’s research papers have been accepted for presentation at IEEE International Electron ...

Forbes contributors publish independent expert analyses and insights. This is my third and last blog on digital storage and memory projections for 2024. The last two articles focused on digital ...

Researchers in Japan have shown that a common oxide material, when engineered precisely enough, can exhibit a rare magnetic ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun mass production of the industry’s first 1 Universal Flash Storage (UFS) 2 Ver. 4.0 ...

Forbes contributors publish independent expert analyses and insights. With the ever-evolving trade war and tariffs that likely include digital storage and memory products as well as other electronics ...